XIN YUE OEM EXCESS MANAGEMENT(HK) CO.，LTD

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Address ( Shenzhen )：11H ,Block B, Duhui100 Building, Zhonghang Road, Futian District, Shenzhen

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Model	Brand	Batch	Size	Quantity	Notes
K5D12571CM－D090	FLASH	11＋	NAND＋SDRAM；2.6V/1.8V；512＋256；50/9.5；FBGA107	88
M36W0R6050U5ZAM*	M36W0R6050U5ZAM*	11＋	12Z5－NP42－HH3	59
M36W0R6050T4ZAQ*	FLASH	11＋	12Z5－NP42－HH2	76
K5L2833ATA－AF66	FLASH	11＋	NOR＋SRAM；1.8V；128M＋32M；84；BGA8x11.6－84	658
S71GL064ABOBFWOZ0	FLASH	11＋	NOR＋SRAM；3V；64＋32M；56FBGA	334
AM50DL128BH702	FLASH	11＋	NOR＋SRAM；3V；128＋32M；70；FBGA73	7991
S71GL256NB0BFWAZ0	FLASH	11＋	NOR＋SRAM；3V；256＋32M；70；BGAF73	162
M36W0R5040T7ZAQF	FLASH	11＋	NOR＋pSRAM；1.8V/1.8V；32M＋16M；70ns；TFBGA8X10－88	89416
M36WOT5040T1ZAQE	FLASH	11＋	NOR＋pSRAM；1.8V/3V；32M＋16M；70ns；TFBGA8X10－88	41679
PF38F1030W0ZTQ0	FLASH	11＋	INTEL FLASH；VDDIO=1.8V；VDDCORE=3.0V；32/16M	248798
M36W0R6050U4ZSF	FLASH	11＋	NOR＋SRAM；1.8V；64M＋32M；70ns；TFBGA8X6－58	152085
K5N6433ABM－AD11	FLASH	11＋	NOR＋UTRAM；1.8V；64M＋32M；70ns；FBGA52－6X6	93183
K4X56163PI－FGC3	FLASH	11＋	DDR；1.8V/1.8V；16Mx16=256Mbit；VFBGA60	1131
MT46H8M16LFCF－75	FLASH	11＋	DDR SDRAM；1.8V/1.8V；128Mbit；VFBGA60	6075
SC6600R2－257G	CPU	11＋	SC6600R；A1；257Pin；BGA12X12－257	577
SC6600R1－257G	CPU	11＋	SC6600R；A1；257Pin；BGA12X12－257	70
SC6600I1－265G	CPU	11＋	SC6600I1；A1；265Pin；BGA12X12－265	2662
SSSS811101		11＋		12406
PGC26702		11＋		28447
SLLB510100		11＋		8213
35－4103F－230－1G－R		11＋		953
AXK740147G		11＋		8953
JAF00－06406－0100		11＋		5113
BTY21－3K32020		11＋		33108
PAN26－03456－1500		11＋		9895
02－0321227		11＋		2936
WKBAH006－A31		11＋		2089
WKBAH006－G31		11＋		5318
03－162111G		11＋		10754
CAH11－08193－SF09		11＋		12753

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